| 摘要 |
A method wherein occurrence of defect of a thin film on which a mask pattern is formed is prevented and a high- quality mask blank is manufactured with high yield, a method for manufacturing a transfer mask by patterning the thin film of the mask blank, and a sputtering target used for manufacturing the mask blank are provided. The sputtering target contains silicon. The Vickers hardness of the target is more than 900 HV. Using the sputtering target, the thin film for mask pattern is formed on a substrate by sputtering, thus manufacturing a high-quality mask blank with few defects. Moreover, by patterning the thin film the transfer mask is manufactured. |
