SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION METHOD FOR THE SAME

摘要

A semiconductor integrated circuit device and a manufacturing method thereof are provided to regularly control the length of channel by forming the impurity region on a part of the gate wiring outer side surface of the lateral diffusion LDMOS(Lateral Double Diffusion MOS) transistor. A lateral diffusion MOS transistor is formed in an SOI semiconductor substrate. An element isolation region(150) defining the first active region(140) is formed in a P-epi layer. The lateral diffusion MOS transistor comprises a gate wiring(220), an n-well(110), the n-type first impurity region(240), the n-type second impurity regions(250), the p-type first impurity region(260), and the p-type second impurity region. The gate wiring is formed in order to surround the element isolation region. The n-well is widely formed at the lower part of the element isolation region around the first active region.