发明名称 |
A vapor drying method and an apparatus |
摘要 |
A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22. First, N2 gas is supplied to the two-fluid nozzle 3 while IPA from the IPA supply source 8 is supplied to the two-fluid nozzle 3 so as to produce the mixed fluid, followed by supplying it to the processing chamber 1a so as to perform a first drying step. Subsequently, N2 gas from the N2 gas supply source 5 is supplied to the processing chamber 1a through the two-fluid nozzle 3 and the branch line 25 so as to perform a second drying step. |
申请公布号 |
EP1742248(B1) |
申请公布日期 |
2009.04.01 |
申请号 |
EP20060014037 |
申请日期 |
2006.07.06 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KAMIKAWA, YUJI;KOBAYASHI, KAZUHIKO;KURODA, NOBUTAKA;NAKASHIMA, MIKIO;TSUDA, OSAMU |
分类号 |
H01L21/00;F26B21/14 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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