| 摘要 |
A semiconductor memory device is provided to reduce the area of the column control block through the share of data bus drive circuit. A semiconductor memory device comprises a plurality of the banks(Bank0, Bank1), a global data line(GIO), and a common global data line driver. The plurality of banks are stacked to the column direction. The global data line corresponds to the plurality of banks. The common global data line driver multiplex the data loaded to a plurality of the local data lines(LIO_DN, LIO_UP) corresponding to each bank. The common global data line driver delivers the data which are multiplexed to the global data line. Each local data line is made of the positive data line and the negative data line.
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