METHOD FOR FABRICATING MASK FOR SEMICONDUCTOR DEVICE MANUFACTURE

摘要

A method for fabricating a mask for semiconductor device manufacture is provided to manufacture the mask having the high reliability by precisely controlling the shape and the size of the pattern. A mask layout(100) comprises the first region(200) and the second region(300). The second region is comprised of a pattern region(310), an aided exposure region(320), and a beam blocking region(330). The aided exposure region contacts with the end of the pattern region. The beam blocking region divides the aided exposure region from the first region. The beam blocking region of the concave type contacts with three sides of the aided exposure region of the rectangular shape. The pattern region contacts with the exposed side of the aided exposure region. The electron beam is irradiated to the first region and the aided exposure region.