| 摘要 |
<p>A flash memory device and a method of manufacture thereof are provided to easily control the flash memory operation voltage by forming a gate into the trench shape. A flash memory device comprises a semiconductor substrate(50), a tunnel oxide film(52), a floating gate(54), an oxide-nitride-oxide film(56), a control gate(58), a source region(60), and a drain region(62). A trench is formed in the semiconductor substrate. The tunnel oxide film is formed in the trench inner wall. The floating gate is formed in the tunnel oxide film. The oxide-nitride-oxide film is formed on the top of the floating gate. The control gate is formed on the top of the oxide-nitride-oxide film.</p> |
