| 摘要 |
<p>A photo mask and a method for fabricating a semiconductor device using the same are provided to improve the CD(Critical Dimension) uniformity of the contact hole pattern by performing the photoresist reflow process after forming the asymmetrical photoresist pattern. A plurality of light-shield patterns(210) defining a contact hole region is formed in an exposure mask(200). A scattering pattern(220) is formed in the neighboring of the light-shield pattern. The scattering pattern is formed at one side of the light-shield pattern. The scattering pattern is not patterned on the top of wafer during the exposure process. The exposure mask is applied to the halftone mask or the binary mask. The etched layer, the BPSG oxide film, the anti-reflective layer and the photoresist are formed on the top of the semiconductor substrate. The photoresist pattern which exposes the contact hole region by performing the exposure development process, is molded.</p> |
