| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to make the second insulation layer spacer maintain a large thickness by reducing the height of the second insulation layer spacer in a process for forming the second insulation layer spacer on the sidewall of a bitline so as to shorten an interval of etch time. CONSTITUTION: A conductive interconnection of a stacked structure of a barrier metal layer(37), a conductive layer for a conductive interconnection and a hard mask layer(41) is formed on an underlying structure including silicon. The first insulation layer spacer is formed on the sidewall of the conductive interconnection. The silicon exposed to a gap between the conductive interconnections is epitaxially grown by the thickness of the barrier metal layer. The second insulation layer spacer is formed on the sidewall of the conductive interconnection.</p> |
