| 摘要 |
<p>A photo mask, a method for manufacturing the photo mask and a method for manufacturing the semiconductor device using the same are provided to variously change the polarization direction in the exposure process by including a phase delay layer of the different thickness. A phase delay layer(430) is formed on the top of the transparent substrate of exposure mask(440) including a light-shield pattern(444a) of the first direction, and a light-shield pattern(444b) of the second direction. The light-shield pattern of the first direction and the light-shield pattern of the second direction are formed into the line-shape. The first photoresist pattern is molded in order to expose the formation region of the light-shield pattern of the first direction. The thickness of the phase delay layer is reduced by etching the phase delay layer. The first photoresist pattern is removed. The second photosensitive pattern(455) is formed in order to expose the formation region of the light-shield pattern of the second direction.</p> |
