| 摘要 |
An image sensor and a manufacturing method thereof are provided to approach the fill factor to 100% by forming the photo diode into the vertical type integrated structure. A circuit including a signal wire(130) is formed in a substrate(110). A photo diode(140) is formed in the substrate of the upper of circuit. The photo diode is electrically connected to the signal wire. A reflection barrier layer(150) is formed in the photo diode. A color filter(160) is formed in the reflection barrier layer. The reflection barrier layer is especially formed in each pixel. The color filter comprises the first color filter(161), the second color filter(162), and the third color filter(163). The cross-talk is prevented by cutting off the absorption to the adjacent pixel of the direct ray of light(L1) and the diffracted light(L2) passing through the second color filter.
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