| 摘要 |
A semiconductor package and a method of fabricating the same are provided to prevent the delamination phenomenon of rewiring due to the rewiring formation process by forming the rewiring pattern within the protective film on the base layer. A protective film(104) is formed on the front side of a semiconductor chip(102) having a bonding pad(106) in order to expose only the bonding pad. The baking process to the protective film is performed. The mask pattern for forming the trench is formed on the protective film. The protective film is etched by using the mask pattern as the etching mask. The trench(T) for the subsequent rewiring is formed by etching the protective film. A bump(108) consisting of the gold is formed in the bonding pad of the semiconductor chip. A rewiring(110) is formed within the trench. The conductive material is formed of the alloy paste.
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