| 摘要 |
<p>A lithography apparatus and a method for forming a semiconductor device using the same are provided to protect the lithography mask by including the pellicle of the honeycomb pattern shape. A lithography mask for the EUV is formed into the laminating structure of the Molybdenum and silicon layer. The substrate which comprises a mask is formed by laminating repetitively the silicon and Molybdenum layer. The barrier layer is formed to smoothly form the interface between the double film and the double film. A pellicle(160) is formed in the front side of a reflector plate(150). The pellicle comprises the honeycomb pattern. The honeycomb pattern of pellicle minimizes the absorption rate about the EUV wavelength. The honeycomb pattern of pellicle efficiently improves the lifetime function of mask.</p> |
