| 摘要 |
<p>A gate dielectric formation method and a structure of semiconductor device are provided to lower the nitrogen concentration from the silicon interface by adjusting the oxidation and the re-nitride process using SiN. An STI(Shallow Trench Isolation) and a well are formed. The thermal nitride deposition process is performed. The oxide film is evaporated through the LPCVD(Low Pressure Chemical Vapor Deposition) process. The thermal oxidation process is performed. The re-oxidation process is performed after the process of depositing the thin SiN. The oxygen is diffused through re-oxidation to the interface between the silicon substrate and the SiN surface. A thin SiO2 film is formed on the surface of the silicon substrate and the SiN. The re-nitride process like the plasma nitridation is performed. The dielectric constant is increased by nitrifying the surface of the oxidized SiN.</p> |
