发明名称 |
HIGHLY MANUFACTURABLE SRAM CELLS IN SUBSTRATES WITH HYBRID CRYSTAL ORIENTATION |
摘要 |
The present invention relates to a semiconductor device structure that includes at least one SRAM cell formed in a substrate. Such SRAM cell comprises two pull-up transistors, two pull-down transistors, and two pass-gate transistors. The pull-down transistors and the pass-gate transistors are substantially similar in channel widths and have substantially similar source-drain doping concentrations, while the SRAM cell has a beta ratio of at least 1.5. The substrate preferably comprises a hybrid substrate with at two isolated sets of regions, while carrier mobility in these two sets of regions differentiates by a factor of at least about 1.5. More preferably, the pull-down transistors of the SRAM cell are formed in one set of regions, and the pass-gate transistors are formed in the other set of regions, so that current flow in the pull-down transistors is larger than that in the pass-gate transistors. |
申请公布号 |
EP1946375(B1) |
申请公布日期 |
2009.04.01 |
申请号 |
EP20060777968 |
申请日期 |
2006.07.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS, BRUCE;COSTRINI, GREGORY;GLUSCHENKOV, OLEG;LEONG, MEIKEI;SEONG, NAKGEUON |
分类号 |
H01L27/11;H01L21/8244 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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