| 摘要 |
A formation method of the semiconductor device is provided to shorten the process of manufacturing semiconductor by skipping the dry etching process for removing the remnant of the photosensitive film. A sacrificial dielectric film(210) is formed in a semiconductor substrate(200). A photosensitive film is formed in the sacrificial dielectric film. The photosensitive pattern is formed by the exposure and development process. The bottom electrode region which exposes the semiconductor substrate is formed by etching the sacrificial dielectric film. A conduction layer for bottom electrode(240) is formed in the whole surface including the bottom electrode region. The top coating material(225) of the water soluble reclaiming the bottom electrode region is formed in the whole surface. The bottom electrode is formed by etching the top coating material and the conductive layer of the water soluble. The sacrificial dielectric film is removed by the dip-out process.
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