FILM FORMING METHOD, FILM FORMING APPARATUS, RECORDING MEDIUM, AND SEMICONDUCTOR DEVICE

摘要

A film forming method, a film forming apparatus, a recording medium, and a semiconductor device are provided to increase the density of layer by causing the collision of a substrate and the ion which is the active species of the gas of the plasma production. The circuitry of the nth is formed on the upper side of a wafer(W). The circuitry comprises a fluorine-added carbon film(10) which is the interlayer insulating film, and a wiring metal(11) reclaimed to the fluorine-added carbon film. A barrier metal film(12) is formed between the fluorine-added carbon film and the wiring metal. The barrier metal film is made of the tantalum nitride film or the tantalum film etc. A barrier film(13) is formed on the surface of the circuitry. The barrier property of the barrier film is improved by applying the high-frequency bias to the wafer. A CF film(20) which is the interlayer insulating film is formed on the surface of the barrier film. An SiCN film(21) and an SiCOH film(22) are laminated on the surface of the CF film. A concave part(14) is formed on the CF film by performing the plasma etching process. The barrier metal film of the conductivity is formed on the surface of the concave part. The wiring metal is reclaimed to the concave part.