| 摘要 |
A metal layer depositing method and a computer-readable recording medium are provided to improve the throughput by forming the desired silicide film into the process of depositing the titanium nitride film. A substrate processing apparatus(100) comprises a common return chamber(102) formed with the polygonal shape and a plurality of process chambers(104A~104D) which can absorb in a vacuum. The substrate processing apparatus comprises a carry-in side transfer room(110) of the rectangular shape having two load-lock chambers(108A,108B) capable of inhaling in the vacuum condition. The substrate processing apparatus comprises a plurality of induction pots(112A~112C) accommodating a plurality of silicon wafers(W) and the cassette, and an orienteer(114) rotating the wafer. The process chamber is connected through gate valves(106A~106D). Main chucks(105A~105D) accommodating the wafer are prepared in each process chamber.
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