| 摘要 |
<p>The edge-emitting semiconductor laser has a laser radiation (13) that produces an active layer (3), two waveguides (1,2) and two coating layers (4,5). The active layer is embedded in the former waveguide layer. The latter waveguide is provided adjacent to the latter coating layer, in which no active layer is embedded. A third coating layer (6) is arranged at a side of the latter waveguide, which is averted from the former wave guide.</p> |
