| 摘要 |
An inductor of a semiconductor device and a method of formation thereof are provided to obtain the high inductance by welding inductors through a metal pad bumper. An inductor including the first inductor top metal line and the first inductor bottom metal wiring are formed in the first semiconductor substrate(102). The first pre-metal dielectric layer(104) is formed between the first semiconductor substrate and the first inductor down metal wiring. The first inter metal dielectric layer(106) is formed between the first inductor top metal line and the first inductor bottom metal wiring. The second inter-metal dielectric layer(112) is formed on the top of the first inter metal dielectric layer. The first semiconductor device including the first metal pad bumper(122) is formed on the first inductor. The second metal pad bumper(140) of the second semiconductor device is welded with the first metal pad bumper. The second pre-metal dielectric layer(130) and the third inter metal dielectric layer(132) are formed in the second semiconductor substrate(128). The second semiconductor device comprises the second inductor bottom metal wiring(134) and the second inductor top metal line(136).
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