| 摘要 |
<p>A method for fabricating a semiconductor device is provided to increase the process margin of the semiconductor device by forming a recess gate region with uniform depth. A method for fabricating a semiconductor device includes the step for forming a hard mask pattern; the step for forming the first recess gate region; the step for removing the hard mask pattern; the step for forming a spacer; the step for forming the second recess gate region; the step for forming the gate. The hard mask pattern defines the recess gate region on a wafer(300). The spacer is formed on the side wall of the first recess gate region. The first recess gate region is formed by the plasma which has different densities at the central region and the edge region of wafer.</p> |
