发明名称 |
MEASUREMENT AND ANALYSIS METHOD OF SEMICONDUCTOR PATTERN STRUCTURE |
摘要 |
A measurement and analysis method of a semiconductor pattern structure is provided to accurately analyze by acquiring the information including the adhesive force and the breakdown force of the pattern structure on a real time basis. A pattern structure(50) is settled on the upper side of a conveying plate(210). An end part of the measurement probe(100) is contacted with the upper side of the conveying plate in order to perform the zero adjustment process utilizing an elevator(300). The feature information of pattern structure which is settled in the conveying plate transferred in a straight line along the first movement route is acknowledged by using the measurement probe. The measurement probe is physically contacted with the top end portion of the pattern structure by using a controller(400). The adhesion information at the conveying plate of the pattern structure is transmitted to the controller.
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申请公布号 |
KR20090032521(A) |
申请公布日期 |
2009.04.01 |
申请号 |
KR20070097838 |
申请日期 |
2007.09.28 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
KIM, TAE GON;PARK, JIN GOO |
分类号 |
H01L21/027;H01L21/66 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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