| 摘要 |
A CMOS image sensor is provided to reduce the influence of the excessive tensile stress which is applied to the source/drain region of the selection element and amplifier element by forming silicide film having the compressive stress in the source/drain region of the amplifier element and the selection element. An APS(Active Pixel Sensor) array region(10) comprises the pixels including the light receiving element. The APS array region is operated by a logic region(20). The APS array region receives the driving signal including a pixel selection signal (SEL), a reset signal(RX), and a charge transfer signal(TX) from a row driver(50). A timing generator(30) provides the timing signal and the control signal to a row decoder(40) and a column decoder(90). A correlated double sampler(60) outputs the difference level corresponding to the difference of the signal level and the noise level. An analog digital converter(70) converts the analog signal corresponding to the difference level into the digital signal. A latch unit(80) latches the digital signal.
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