发明名称 HIGH VOLTAGE MEASURE CIRCUIT AND NON-VOLATILE MEMORY DEVICE INCLUDING THE CIRCUIT
摘要 A high voltage measuring circuit and a non-volatile memory device including the same are provided to reduce the layout area of the semiconductor memory device by sharing one measurement pad. A high voltage measuring circuit(100) comprises a plurality of high voltage switch units(100_1~100_n). A plurality of high voltage switch units are connected to one high voltage measurement pad(CMPAD). Each high voltage switch unit comprises the switching unit. The switching unit delivers the input high voltage(HV1~HVn) corresponding to the enable signal(EN1~ENn) to the high voltage measurement pad. The switching unit comprises the first switch and the second switch. The first switch applies the input high voltage in response to the activation of the enable signal to the high voltage measurement pad.
申请公布号 KR20090032846(A) 申请公布日期 2009.04.01
申请号 KR20070098404 申请日期 2007.09.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HA, HYUN CHUL;KWON, OH SUK
分类号 G11C16/30 主分类号 G11C16/30
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