| 摘要 |
<p>A fine pattern forming method of a semiconductor device is provided to simplify the semiconductor manufacturing process by forming the semiconductor structure on the interlayer insulating film positioned under the photoresist pattern. A fine pattern forming method of a semiconductor device includes a step for forming a photoresist film on a substrate(20); a step for exposing the photoresist film; a step for injecting an impurity ion on the photoresist film; a step for forming a photoresist pattern; a step for oxidizing an upper side of the photoresist pattern; a step for performing the etching process on the top of the substrate. The substrate has an interlayer insulating film(21) under the photoresist film. The impurity ions are injected into the upper side(22A) of the photoresist film.</p> |
