发明名称 OVERLAY VERNIER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p>An overlay vernier and a method for fabricating a semiconductor device using the same are provided to measure the movement degree of the focus identifying mark located in the wafer outer ring by arranging the focus identifying marks having the pattern of the wedge shape. A focus identifying mark(100) comprises a mother vernier(120) of the box type. A daughter vernier(130) having designated line width is formed in the inner side of the focus identifying mark. A photosensitive film is formed on the top of the interlayer substance including the mother vernier. The photosensitive pattern which is the daughter vernier is formed by the exposure and development process. The length of the wedge pattern is changed according to the focus variation. The pattern length is short as the out of focus becomes severe.</p>
申请公布号 KR20090032883(A) 申请公布日期 2009.04.01
申请号 KR20070098460 申请日期 2007.09.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SEOK KYUN
分类号 H01L21/027 主分类号 H01L21/027
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