发明名称 RESIST COMPOSITION AND PATTERNING PROCESS
摘要 <p>A resist composition is provided to ensure good barrier capacity for water and to solve the droplet residue dud to high receding contact angle for water. A resist composition comprises a polymer as base resin improving and degrading the solubility in alkali by acids; and a polymer having repeating units represented by the chemical formula 1 as a polymeric additive. In the chemical formula 1, R^1 shows fluorine atom or trifluoromethyl group; R^2 and R^3 are hydrogen atom or C1-20 linear, branched or cyclic alkyl group; R^4 is hydrogen atom or acid-liable group; R^5-R^8 are hydrogen atom, fluorine atom, or C1-20 linear, branched or cyclic alkyl group; m is 0 or 1; and 0.2<=a<=0.8, 0.1<=b<=0.6.</p>
申请公布号 KR20090032012(A) 申请公布日期 2009.03.31
申请号 KR20080094162 申请日期 2008.09.25
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;HASEGAWA KOJI;WATANABE TAKERU;HARADA YUJI
分类号 G03F7/004 主分类号 G03F7/004
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