| 摘要 |
In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer 6 having a protective tape 6 a stuck to a circuit formation face, the silicon wafer 6 is mounted on a mounting surface 3 d which is provided on an upper surface of a lower electrode 3 formed of a conductive metal with the protective tape 6 a turned toward the mounting surface 3 d. When a DC voltage is to be applied to the lower electrode 3 by a DC power portion 18 for electrostatic adsorption to adsorb and hold the silicon wafer 6 onto the lower electrode 3 in the plasma treatment, the protective tape 6 a is utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer 6 can be held by a sufficient electrostatic holding force. |
