发明名称 |
Semiconductor device having raised cell landing pad and method of fabricating the same |
摘要 |
A semiconductor device and method of manufacturing the same having pad extending parts, the semiconductor device includes an isolation layer that defines an active region and a gate electrode which traverses the active region. A source region is provided in the active region at one side of the gate electrode, and a drain region is provided in the active region at a second side of the gate electrode. A first interlayer insulating layer covers the semiconductor substrate. A source landing pad is electrically connected to the source region, and a drain landing pad is electrically connected to the drain region. A pad extending part is laminated on one or more of the source landing pad and the drain landing pad. The pad extending part has an upper surface located in a plane above a plane corresponding to the upper surfaces of the source landing pad and the drain landing pad.
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申请公布号 |
US7511328(B2) |
申请公布日期 |
2009.03.31 |
申请号 |
US20050268551 |
申请日期 |
2005.11.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO JUNG-WOO;AHN TAE-HYUK;HONG JONG-SEO |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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