发明名称 Semiconductor device having raised cell landing pad and method of fabricating the same
摘要 A semiconductor device and method of manufacturing the same having pad extending parts, the semiconductor device includes an isolation layer that defines an active region and a gate electrode which traverses the active region. A source region is provided in the active region at one side of the gate electrode, and a drain region is provided in the active region at a second side of the gate electrode. A first interlayer insulating layer covers the semiconductor substrate. A source landing pad is electrically connected to the source region, and a drain landing pad is electrically connected to the drain region. A pad extending part is laminated on one or more of the source landing pad and the drain landing pad. The pad extending part has an upper surface located in a plane above a plane corresponding to the upper surfaces of the source landing pad and the drain landing pad.
申请公布号 US7511328(B2) 申请公布日期 2009.03.31
申请号 US20050268551 申请日期 2005.11.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO JUNG-WOO;AHN TAE-HYUK;HONG JONG-SEO
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
主权项
地址