发明名称 |
Spacer T-gate structure for CoSi2 extendibility |
摘要 |
A semiconductor process and apparatus provide a T-shaped structure (84) formed from a polysilicon structure (10) and polysilicon spacers (80, 82) and having a narrower bottom dimension (e.g., at or below 40 nm) and a larger top critical dimension (e.g., at or above 40 nm) so that a silicide may be formed from a first material (such as CoSi2) in at least the upper region (100) of the T-shaped structure (84) without incurring the increased resistance caused by agglomeration and voiding that can occur with certain silicides at the smaller critical dimensions.
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申请公布号 |
US7510922(B2) |
申请公布日期 |
2009.03.31 |
申请号 |
US20060339953 |
申请日期 |
2006.01.26 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HALL MARK D.;JAWARANI DHARMESH;SHROFF MEHUL D.;TRAVIS EDWARD O. |
分类号 |
H01L21/338;H01L21/4763 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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