| 摘要 |
Methods for producing a multilayer semiconductor structure are described. In an embodiment, the method includes providing a support substrate made of a first semiconductor material having a first lattice parameter, and depositing a layer of a second semiconductor material having a second lattice parameter, substantially different than the first, onto the support substrate to form an intermediate structure having an interface therebetween, the depositing being conducted such that most of the defects are confined to an adaptation layer located in a region adjacent to the interface. The method also includes creating a zone of weakness in the intermediate structure, bonding the second semiconductor material layer to a target substrate, detaching the support substrate at the zone to obtain a multilayer semiconductor structure having an exposed surface where detached, and fully removing the adaptation layer to obtain a relaxed thin layer of the second semiconductor material having a high quality surface.
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