发明名称 Voltage regulator for flash memory device
摘要 Provided is a voltage regulator of a flash memory device. Embodiments of the invention provide a voltage regulator that is configured to regulate either an internal pumping voltage or an external high voltage. In embodiments of the invention, the voltage regulator includes two switches having different switching current characteristics: when regulating the internal pumping voltage, the voltage regulator is configured to activate a switch having a relatively high switching current to output the regulated voltage; but when regulating the high external voltage, the voltage regulator is configured to activate a switch having a relatively low switching current to output the regulated voltage during at least a set-up time. In an embodiment of the invention, the voltage regulator may be configured to activate both switches to regulate the high external voltage after the set-up time. In yet another embodiment of the invention, after the set-up time, the voltage regulator may be configured to deactivate the switch having the relatively low switching current and activate the switch having the relatively high switching current to regulate the high external voltage.
申请公布号 US7512010(B2) 申请公布日期 2009.03.31
申请号 US20070760829 申请日期 2007.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO JI-HO;KANG HYEOK
分类号 G11C16/06 主分类号 G11C16/06
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