发明名称 |
Methods and apparatus for a stepped-drift MOSFET |
摘要 |
A power metal-oxide-semiconductor field effect transistor (MOSFET)(100) incorporates a stepped drift region including a shallow trench insulator (STI)(112) partially overlapped by the gate (114) and which extends a portion of the distance to a drain region (122). A silicide block extends from and partially overlaps STI (112) and drain region (122). The STI (112) has a width that is approximately 50% to 75% of the drift region.
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申请公布号 |
US7511319(B2) |
申请公布日期 |
2009.03.31 |
申请号 |
US20060361624 |
申请日期 |
2006.02.24 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ZHU RONGHUA;BOSE AMITAVA;KHEMKA VISHNU K.;ROGGENBAUER TODD C. |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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