发明名称 |
Method for manufacturing a semiconductor device having trenches defined in the substrate surface |
摘要 |
In the method for manufacturing a semiconductor device according to the invention including the step of forming trenches having the depth thereof in perpendicular to the major surface of a semiconductor substrate, the step of forming trenches includes the steps of performing trench etching using an insulator film, formed on the major surface of the semiconductor substrate and shaped with a predetermined pattern, for a mask to form the trenches; etching the inside of the trenches using a halogen containing gas to smoothen the inside of the trenches; and thermally treating in a non-oxidizing and non-nitriding atmosphere. The manufacturing method according to the invention facilitates well removing the etching residues remaining in the trenches and rounding the trench corners properly when the trenches are 2 mum or narrower in width and even when the trenches are 1 mum or narrower in width.
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申请公布号 |
US7510975(B2) |
申请公布日期 |
2009.03.31 |
申请号 |
US20050233377 |
申请日期 |
2005.09.23 |
申请人 |
FUJI ELECTRIC HOLDINGS CO., LTD. |
发明人 |
KISHIMOTO DAISUKE;KURIBAYASHI HITOSHI;SANO YUJI;OHI AKIHIKO;NAGAYASU YOSHIHIKO |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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