PATTERN FORMING METHOD, METAL OXIDE FILM FORMING MATERIAL AND METHOD FOR USING THE METAL OXIDE FILM FORMING MATERIAL

摘要

A pattern forming method includes a step of forming a first resist film by applying a first chemically amplified resist composition on a supporting body; a step of forming a plurality of resist patterns by selectively exposing and developing the first resist film; a step of forming a plurality of film patterns by forming films composed of metal oxide films on the surfaces of the resist patterns; a step of forming a second resist film by applying a second chemically amplified resist composition on the supporting body whereupon the film patterns are formed; and a step of forming a pattern, which is composed of the film patterns and the resist pattern formed on the second resist pattern, on the supporting body, by selectively exposing and developing the second resist film.