| 发明名称 |
Well for CMOS imager and method of formation |
| 摘要 |
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
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| 申请公布号 |
US7511354(B2) |
申请公布日期 |
2009.03.31 |
| 申请号 |
US20060636658 |
申请日期 |
2006.12.11 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
RHODES HOWARD E.;PATRICK INNA;MAURITZSON RICHARD A. |
| 分类号 |
H01L29/00;H01L21/00;H01L27/10;H01L27/146 |
主分类号 |
H01L29/00 |
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