发明名称 |
Porous silicon for isolation region formation and related structure |
摘要 |
A method of forming an isolation region using porous silicon and a related structure are disclosed. One embodiment of the method may include forming a collector region; forming a porous silicon region in the collector region; forming a crystalline silicon intrinsic base layer over the collector region, the intrinsic base layer extending over a portion of the porous silicon region to form an extrinsic base; and forming an isolation region in the porous silicon region. The method is applicable to forming an HBT having a structure including a crystalline silicon intrinsic base extending beyond a collector region and extending over an isolation region to form a continuous intrinsic-to-extrinsic base conduction path of low resistance. The HBT has improved performance by having a smaller collector to intrinsic base interface and larger intrinsic base to extrinsic base interface.
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申请公布号 |
US7511317(B2) |
申请公布日期 |
2009.03.31 |
申请号 |
US20060423286 |
申请日期 |
2006.06.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADAM THOMAS N.;BEDELL STEPHEN W.;DE SOUZA JOEL P.;SCHONENBERG KATHRYN T.;WALLNER THOMAS A. |
分类号 |
H01L27/082;H01L27/102 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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