| 摘要 |
<p>Structure and Method of Producing Isolation with Non-Dopant Implantation A method of forming an isolation trench structure is disclosed, the method includes forming an isolation trench in a semiconductor body associated with an isolation region, and implanting a non-dopant atom into the isolation trench, thereby forming a region to modify the halo profile in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material. FIG 1A</p> |
