DISPOSITIF DE DETECTION HYPERFREQUENCE LARGE BANDE

摘要

The module (50) has a distributed amplifier including N number of FETs (55) connected to a common drain line (56) and a common gate line (54). The amplifier has an input (52) on the gate line and an output (53) on the drain line. A semiconductor based active broadband detecting circuit e.g. diode (51) such as Schottky diode, is connected to an end of the gate line of the amplifier, where the module is realized according to microwave monolithic integrated circuit technology. An independent claim is also included for a broadband microwave frequency detecting device comprising P number of detecting modules.