发明名称 METHOD AND APPARATUS FOR INSPECTING FOREIGN PARTICLE DEFECTS
摘要 The invention relates to a device production process for forming a circuit pattern on a substrate such as semiconductor device. To enable a stable inspection of a minute foreign particle and a pattern defect occurring in manufacture of a device at a high speed and with a high sensitivity, an object to be inspected on which a transparent film is formed, is irradiated with a beam which is emitted from an illuminator whose illumination direction and illumination angle are selected from a plurality of choices to be optimum, so that scattered reflected light from a minute foreign particle defect on the object or the transparent film is effectively detected by eliminating a noise from the pattern formed on the object, and a detection optical system is optimized by evaluating and adjusting, with an image forming performance checker, an image forming performance of the detection optical system included in an inspecting apparatus.
申请公布号 US2009079973(A1) 申请公布日期 2009.03.26
申请号 US20080273174 申请日期 2008.11.18
申请人 UTO SACHIO;NAKANO HIROYUKI 发明人 UTO SACHIO;NAKANO HIROYUKI
分类号 G01N21/00 主分类号 G01N21/00
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