摘要 |
<p>The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single- damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low- k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;ALLEN, ROBERT, D.;BROCK, PHILLIP, J.;DAVIS, BLAKE, W.;HUANG, WU-SONG, S.;LIN, QINGHUANG;NELSON, ALSHAKIM;PURUSHOTHAMAN, SAMPATH;SOORIYAKUMARAN, RATNAM |
发明人 |
ALLEN, ROBERT, D.;BROCK, PHILLIP, J.;DAVIS, BLAKE, W.;HUANG, WU-SONG, S.;LIN, QINGHUANG;NELSON, ALSHAKIM;PURUSHOTHAMAN, SAMPATH;SOORIYAKUMARAN, RATNAM |