| 摘要 |
<p>Disclosed is a CMP slurry for silicon film polishing, which is composed of a polishing composition containing abrasive grains, an oxidizing agent, a cationic surfactant and water. This polishing composition is suitable for the CMP step of a silicon film of semiconductor devices, since it enables to obtain excellent flatness and remaining film thickness controllability, while improving the yield and reliability of the semiconductor devices. This polishing composition also enables to reduce the production cost.</p> |
