| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor having excellent electrical characteristics, and high reliability, and a display device having it. SOLUTION: A gate insulating film is formed on a gate electrode, a microcrystal semiconductor film containing a metallic element is formed on the gate insulating film, and thereby crystallinity on the interface between the gate insulating film and the microcrystal semiconductor film containing the metallic element is raised. The microcrystal semiconductor film containing the metallic element of which crystallinity on the interface between itself and the gate insulating film is raised is used as a channel forming region to form this thin film transistor. COPYRIGHT: (C)2009,JPO&INPIT
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