| 摘要 |
PROBLEM TO BE SOLVED: To improve the driving capability of a transmission transistor by suppressing variations in the driving capability of a conventional transmission transistor. SOLUTION: This semiconductor device has a first inverter consisting of a drive transistor 30 and a load transistor 40, a second inverter consisting of a drive transistor 31 and a load transistor 41, a transmission transistor 10 arranged between the output terminal of the first inverter and one of a pair of bit-lines, a transmission transistor 11 arranged between the output terminal of the second inverter and the other of a pair of bit-lines, and an insulating transistor 50 that insulates the drive transistor 30 and the transmission transistor 11. The transmission transistor 10, the transmission transistor 11, the drive transistor 30 and the insulating transistor 50 are formed in continuous active regions, and the insulating transistor 50 is arranged between the drive transistor 30 and the transmission transistor 11. COPYRIGHT: (C)2009,JPO&INPIT
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