发明名称 FABRICATION METHOD OF POLYSILICON LAYER
摘要 A fabrication method of a polysilicon layer is provided. First, a substrate is provided. Then, an amorphous silicon layer is formed on the substrate. After that, a patterned photomask having a light transmitting area and a light shielding area is provided, and the amorphous silicon layer is irradiated with a light by using the patterned photomask as a mask, wherein the amorphous silicon layer corresponding to the light transmitting area is transformed into a hydrophilic amorphous silicon layer, and the amorphous silicon layer corresponding to the light shielding area remains as a hydrophobic amorphous silicon layer. Next, a hydrophilic metal catalyst is provided and disposed on the hydrophilic amorphous silicon layer. After that, an annealing process is performed to transform the hydrophilic metal catalyst into a metal catalyst layer, and the metal catalyst layer reacts with the amorphous silicon layer to form a polysilicon layer.
申请公布号 US2009081855(A1) 申请公布日期 2009.03.26
申请号 US20080053635 申请日期 2008.03.24
申请人 CHUNGHWA PICTURE TUBES, LTD. 发明人 TSAI YI-YUN;CHIU SHAO-YU;MA CHIA-HSUAN;YU PEI-CHEN
分类号 H01L21/20 主分类号 H01L21/20
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