发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which a transfer chamber is automatically purged by means of inert gas. SOLUTION: The substrate processing apparatus includes a controller that performs control so that the transfer chamber 102 connected to a processing chamber 202 for processing a substrate is purged by gas, the controller having a switching unit that switches a function of exhausting the gas in the transfer chamber 102 in one direction, and a function of circulating the gas through the transfer chamber 102 in an inert gas atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009065113(A) |
申请公布日期 |
2009.03.26 |
申请号 |
JP20080111680 |
申请日期 |
2008.04.22 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
OZAKI YUKIO;YOSHINO AKIO;TAKAHATA SATORU;NUNOSAWA REIZO |
分类号 |
H01L21/205;C23C16/44;H01L21/22;H01L21/31;H01L21/324;H01L21/677 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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