发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which a transfer chamber is automatically purged by means of inert gas. SOLUTION: The substrate processing apparatus includes a controller that performs control so that the transfer chamber 102 connected to a processing chamber 202 for processing a substrate is purged by gas, the controller having a switching unit that switches a function of exhausting the gas in the transfer chamber 102 in one direction, and a function of circulating the gas through the transfer chamber 102 in an inert gas atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009065113(A) 申请公布日期 2009.03.26
申请号 JP20080111680 申请日期 2008.04.22
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 OZAKI YUKIO;YOSHINO AKIO;TAKAHATA SATORU;NUNOSAWA REIZO
分类号 H01L21/205;C23C16/44;H01L21/22;H01L21/31;H01L21/324;H01L21/677 主分类号 H01L21/205
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