| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that defective read-out of data is caused by a leak current in a conventional semiconductor memory device. SOLUTION: The semiconductor memory device is the device in which one memory cell is formed by a transmission transistor, a load transistor, and a drive transistor, the device has a first transmission transistor 31 connected to a connection point of the load transistor 21 and the drive transistor 11, a second transmission transistor 41 connected between the first transmission transistor 31 and a bit line DB, and a compensation transistor 51 connected between a connection point of the first transmission transistor 31 and the second transmission transistor 41 and a constant voltage node VDD, and becoming exclusively a conduction state for at least one of the first transmission transistor 31 and the second transmission transistor 41. COPYRIGHT: (C)2009,JPO&INPIT
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