| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition system capable of suppressing generation of abnormal discharge, normally depositing a thin film, and enhancing the yield. SOLUTION: The film deposition system comprises a film deposition chamber 2 which is a space for performing the film deposition, a first electrode 4 and a second electrode 5 arranged in the film deposition chamber, a mechanism constituted of a high frequency power source and a matching circuit to supply the power to one of the first electrode 4 and the second electrode 5 from the outside of the film deposition chamber 2, a mechanism to supply the power to the other of the first electrode 4 and the second electrode 5 from the outside of the film deposition chamber 2 or to be connected to the ground potential, a mechanism which allows gas to flow into between the first electrode 4 and the second electrode 5 and supplies the power to form plasma, and heats the film deposition chamber 2 so as to perform the film deposition by using the plasma, and a plurality of deposition-preventive plates 6 arranged corresponding to a plurality of side face parts in the film deposition chamber 2 so as to surround the film deposition chamber 2. The deposition-preventive plate 6 is divided into a plurality of portions, and spaces 6a, 6b are formed between the deposition-preventive plates 6 close to each other. COPYRIGHT: (C)2009,JPO&INPIT
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