| 摘要 |
<p>The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles consisting of titanium dioxide having an anatase structure, wherein an x-ray diffraction pattern of the particles has a ratio of X/Y of 0.5 or more, wherein X is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of 3.24 Å, and Y is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of 3.51 Å, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate.</p> |
