发明名称 DEPOSITION APPARATUS, DEPOSITION SYSTEM AND DEPOSITION METHOD
摘要 <p>[PROBLEMS] A film forming system in which mutual contamination in each layer formed in a process of producing an organic EL element etc. is avoided, that has a small footprint, and that has high productivity. [MEANS FOR SOLVING PROBLEMS] A film forming device (13) for forming a film on a substrate. The film forming device (13) has, inside a processing container (30), a first film forming mechanism (35) for forming a first layer and a second film forming mechanism (36) for forming a second layer. A gas discharge opening (31) for reducing the pressure in the processing container (30) is provided in the film forming device (13), and the first film forming mechanism (35) is located closer to the gas discharge opening (31) than the second film forming mechanism (36). The first film forming mechanism (35) forms, for example, the first layer on the substrate by vapor deposition, and the second film forming mechanism (36) forms, for example, the second layer on the substrate by spattering.</p>
申请公布号 KR20090031616(A) 申请公布日期 2009.03.26
申请号 KR20097002799 申请日期 2009.02.11
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUBAYASHI SHINJI;MOYAMA KAZUKI;TOBE YASUHIRO
分类号 C23C14/56;C23C14/12;C23C14/34;H01L51/50 主分类号 C23C14/56
代理机构 代理人
主权项
地址