| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithographic apparatus and device manufacturing method capable of more quickly resuming production after a period where the flow is smaller than the full flow purge. <P>SOLUTION: The lithographic apparatus using a 157 nm irradiation, wherein a projected beam is activated with low intensity to monitor intensity at a substrate level after a low flow purge mode is used. It is determined safe that exposure is resumed when the intensity at the substrate level indicates that transmission factor on a beam path returns to a normal value. <P>COPYRIGHT: (C)2009,JPO&INPIT |
